Electrical resistivity of the heavy-fermion system CePtSi under pressure

Journal Article · Fri Feb 01 04:00:00 EST 1991 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.43.3664· OSTI ID:5734111

Yang, H D ^[1]; Lee, W H ^[2]

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1. Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, Republic of China (TW)
2. Materials Research Laboratories-Industrial Technology Research Institute, Chutung, Hsinchu 31015, Taiwan (Republic of China)

The electrical resistivity of the heavy-fermion system CePtSi has been measured under pressures up to 15 kbar and at temperatures from 1.2 to 300 K. With increasing pressure {ital P}, the room-temperature magnetic resistivity {rho}{sub {ital m}} for CePtSi, {rho}{sub {ital m}}(CePtSi)={rho}(CePtSi){minus}{rho}(LaPtSi) and the temperature {ital T}{sub {ital m}}, at which {rho}{sub {ital m}} takes a maximum, increase, whereas the {rho}{sub {ital m}} at low temperatures (for instance at {ital T}=4.2 K) decreases. These results can be understood on the basis of competition between Kondo-lattice behavior and mixed-valence effects scaled by the lattice spacing. The correspondence between the pressure effect in CePTSi and the alloying effect in Ce(Pt{sub 1{minus}{ital x}}Ni{sub {ital x}})Si is discussed as a function of unit-cell volume. In addition, a comparison of this compound with other heavy-fermion systems, such as CeAl{sub 3}, CeCu{sub 2}Si{sub 2}, and CeCu{sub 6} is included.

• OSTI ID: 5734111
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:4; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CERIUM COMPOUNDS
CERIUM SILICIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FERMIONS
KONDO EFFECT
LOW TEMPERATURE
MEDIUM TEMPERATURE
PHYSICAL PROPERTIES
PLATINUM COMPOUNDS
PLATINUM SILICIDES
PRESSURE DEPENDENCE
RARE EARTH COMPOUNDS
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ULTRALOW TEMPERATURE
VERY HIGH PRESSURE
VERY LOW TEMPERATURE