Amplification properties of a tunable single transverse mode laser diode

Journal Article · Sun Nov 01 04:00:00 EST 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073259· OSTI ID:5733457

Kikushima, K; Sano, K; Nagai, H

The amplification properties of a tunable single transverse mode laser diode can be exploited to be used as an n x 1 wavelength division switch. This kind of switch is expected to play an important role in telecommunications systems, especially when signals are not synchronous or when signal bit rates are various. The light amplification ratio between a desired main-mode wavelength and undesired submode wavelengths are improved by decreasing injection light power, and a ratio of 8.5 dB is achieved. This experimental result is in good agreement with theory. It is predicted theoretically using rate equations that the ratio is also improved by increasing the laser cavity mirror loss difference between the main mode and the submodes. A light amplification ratio of more than 11 dB is obtained when the cavity mirror loss difference is more than 50 cm/sup -1/.

• Research Organization: NTT Telecommunications Networks Labs., Nippon Telegraph and Telephone Corp., 1-2356 Take Yokosuka-shi Kanagawa-ken 238-03
• OSTI ID: 5733457
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:11; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
DATA TRANSMISSION SYSTEMS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
LASER CAVITIES
LASER MIRRORS
LASERS
LIGHT TRANSMISSION
MIRRORS
OPERATION
OPTICS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SWITCHING CIRCUITS
TUNING
VISIBLE RADIATION
WAVELENGTHS