Bandwidth-limited picosecond pulse generation in a synchronously pumped GaAs laser containing a variable absorber diode

Journal Article · Sat Oct 01 00:00:00 EDT 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94466· OSTI ID:5727338

Stallard, W A; Bradley, D J

We report combined active and passive mode locking of an external cavity semiconductor laser containing one absorbing and one gain diode. Compared with active mode locking alone this method requires less critical tuning of the rf modulation frequency and is not limited to operation close to threshold. Colliding pulse mode locking is achieved by placing the absorber diode at one end of the cavity so as to increase the effective absorber cross section. Streak camera measurements show that the pulse trains are free from background noise and that the 30-ps pulses are bandwidth limited with sech/sup 2/ profiles.

• Research Organization: Laser Group, Physics Department, Trinity College, Dublin 2, Ireland
• OSTI ID: 5727338
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC EQUIPMENT
ENERGY ABSORPTION
EQUIPMENT
FUNCTION GENERATORS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
MODE LOCKING
OPTICAL PUMPING
PHOTOGRAPHY
PNICTIDES
PULSE GENERATORS
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SIGNAL-TO-NOISE RATIO
STREAK PHOTOGRAPHY