On the probabilistic characterization of side mode fluctuations in pulse-modulated nearly-single-mode semiconductor lasers

Journal Article · Sat Dec 01 04:00:00 EST 1990 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/3.64338· OSTI ID:5727017

Cartledge, J C ^[1]

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1. Dept. of Electrical Engineering, Queens Univ., Kingston, Ontario K7L 3N6 (CA)

Occasionally, a weak side mode in a pulse-modulated nearly-single-mode semiconductor laser can possess a significant portion of the total laser output power during the leading edge of a pulse. When combined with the group velocity dispersion of single-mode optical fibers, this mode partitioning can influence the bit error ratio performance of high-speed lightwave systems. Simulation-based solutions of stochastic rate equations, which describe the modulation dynamics of the laser, are used to probabilistically characterize the side-mode fluctuations. The extent of the partitioning is influenced by the threshold gain difference between the lasing mode and the dominant side mode, the laser bias current, and the injection current pulse shape. The effect of these three parameters on the mean and standard deviation of the side mode power during a signaling interval is examined.

• OSTI ID: 5727017
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA) Vol. 26:12; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
COMPUTERIZED SIMULATION
EQUATIONS
FLUCTUATIONS
LASERS
MODULATION
OPTICAL MODES
OSCILLATION MODES
PROBABILITY
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SIMULATION
SOLID STATE LASERS
STOCHASTIC PROCESSES
VARIATIONS