Density of states at mid gap in hydrogenated amorphous silicon

Conference · Wed Jan 01 04:00:00 EST 1986

OSTI ID:5726889

Yahya, E; Shanks, H R

The density of states distributions near mid gap in a series of hydrogenated amorphous silicon films have been determined from space charge limited current measurements. The measurements were made on Au/aSi:H Schottky diode structures prepared by reactive rf sputter deposition. Samples with hydrogen concentrations near 16% as determined from infrared absorption had densities of states of 3 x 10/sup 14/ states/cm/sup 3/ eV. The experimental results indicate that high quality aSi:H films with low densities of states can be obtained under certain deposition conditions and that the density of states at mid gap is hydrogen concentration dependent with a minimum near 16%. For a given hydrogen concentration, films thicker than 2 ..mu..m yielded the lowest density of states consistent with a model in which diffusion currents can be neglected and where surface and interface layers have a higher defect density than the bulk of the film. 7 refs., 8 figs.

• Research Organization: Ames Lab., IA (USA)
• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 5726889
• Report Number(s): IS-M-584; CONF-8604210-1; ON: DE86011403
• Country of Publication: United States
• Language: English

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DATA
ELEMENTS
ENERGY LEVELS
ENERGY-LEVEL DENSITY
EXPERIMENTAL DATA
FERMI LEVEL
FILMS
HYDROGEN
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SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
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