Pulsed laser-induced SEU in integrated circuits; A practical method for hardness assurance testing

Conference · Sat Dec 01 00:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5722132

Buchner, S; Kang, K ^[1]; Stapor, W J; Campbell, A B; Knudson, A R; McDonald, P ^[2]; Rivet, S ^[3]

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1. Martin Marietta Labs., Baltimore, MD (USA)
2. Naval Research Lab., Washington, DC (USA)
3. Harris Corp., Melbourne, FL (USA). Semiconductor Sector

The authors have used a pulsed picosecond laser to measure the threshold for single event upset (SEU) and single event latchup (SEL) for two different kinds of integrated circuits. The relative thresholds show good agreement with published ion upset data. The consistency of the results together with the advantages of using a laser system suggest that the pulsed laser can be used for SEU/SEL hardness assurance of integrated circuits.

• OSTI ID: 5722132
• Report Number(s): CONF-900723-; CODEN: IETNA; TRN: 91-014898
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 37:6; Conference: 27. IEEE annual conference on nuclear and space radiation effects, Reno, NV (USA), 16-20 Jul 1990; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
LASERS
PULSES
RADIATION HARDENING
THRESHOLD ENERGY
ELECTRONIC CIRCUITS
ENERGY
HARDENING
MICROELECTRONIC CIRCUITS
RADIATION EFFECTS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)