Improvement of photoelectrochemical hydrogen generation by surface modification of p-type silicon semiconductor photocathodes
The improvement of H/sub 2/ evolution from two different types of catalytic p-type photocathode surfaces has been examined. p-Type Si has been platinized by phtotelectrochemically plating Pt(0) onto the Si surface. Such a photocathode shows significant improvement (compared to naked p-type Si) for photochemical H/sub 2/ evolution with respect to output photovoltage, fill factor, and overall efficiency. Such photocathodes having an optimun amount of Pt(0) give a pH-dependent output voltage with respect to the H/sub 2/O/H/sub 2/ couple, but the dependence is not a simple 59-mV/pH dependence. No pH dependence would be expected if Pt(0) formed a Schottky barrier when plated onto p-type Si. A second kind of H/sub 2/ evolution catalyst has been confined to the surface of p-type Si. Polymeric quantities of an electroactive N,N'-dialkyl-4,4'-bipridinium reagent, (PQ/sup 2 +/.)/sub n/, have been confined to the surface. The Br/sup -/ counterions of the polymer are then exchanged by PtCl/sub 6//sup 2 -/. Photoreduction then yields Pt(0) dispersed in the polymer. Such a surface is again significantly improved compared to naked p-type Si with respect to H/sub 2/ evolution. A comparison of the naked p-Si, the simply platinized, and the (PQ/sup 2 +//sup ///sup +//sub n/.nPt(0))/sub surf./ system is made and contrasted to the expected behavior of an external Schottky barrier photocell driving an electrolysis cell with a Pt cathode. Experiments with n-type MoS/sub 2/, n-type Si, Pt, Au, and W cathodes functionalized with the (PQ/sup 2 +//sup ///sup +/.)sub n/.nPt(0))/sub surf./ system compared to the same surface directly platinized confirm an important difference in the mechanism of H/sub 2/ evolution catalysis for the two surface catalyst systems. p-Type Si modified with optimum amounts of Pt(0) by direct platinization appears to give improved H/sub 2/ evolution efficiency by a mechanism where the Pt(0) serves as a catalyst that does not alter the interface energetics of the semiconductor.
- Research Organization:
- Massachusetts Inst. of Technology, Cambridge
- OSTI ID:
- 5719935
- Journal Information:
- J. Am. Chem. Soc.; (United States), Journal Name: J. Am. Chem. Soc.; (United States) Journal Issue: 2 Vol. 104:2; ISSN JACSA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
080101* -- Hydrogen-- Production-- Electrolysis
14 SOLAR ENERGY
140505 -- Solar Energy Conversion-- Photochemical
Photobiological
& Thermochemical Conversion-- (1980-)
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400500 -- Photochemistry
AUGMENTATION
CATHODES
DEPOSITION
EFFICIENCY
ELECTRODEPOSITION
ELECTRODES
ELECTROLYSIS
ELECTROPLATING
ELEMENTS
HYDROGEN PRODUCTION
LYSIS
METALS
PHOTOCATHODES
PHOTOELECTROLYSIS
PLATING
PLATINUM
PLATINUM METALS
SEMIMETALS
SILICON
SURFACE COATING
TRANSITION ELEMENTS