Method and apparatus for melt growth of crystalline semiconductor sheets
Patent
·
OSTI ID:5719531
An economical method is presented for forming thin sheets of crystalline silicon suitable for use in a photovoltaic conversion cell by solidification from the liquid phase. Two spatially separated, generally coplanar filaments wettable by liquid silicon and joined together at the end by a bridge member are immersed in a silicon melt and then slowly withdrawn from the melt so that a silicon crystal is grown between the edge of the bridge and the filaments.
- DOE Contract Number:
- AC02-77CH00178
- Assignee:
- Dept. of Energy
- Application Number:
- ON: DE82004529
- OSTI ID:
- 5719531
- Country of Publication:
- United States
- Language:
- English
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