Multiple laser having a distributed resonator

Patent · Tue Jan 05 00:00:00 EST 1982

OSTI ID:5709835

Di Forte, M A; Papuchon, M; Puech, C

A semiconductor laser particularly useful for frequency multiplexing in optical telecommunications is described haveing a distributed resonator supplying from a single etched grating, two or more radiations of different wavelengths. The laser comprises a junction formed by an n-type substrate, a p-type radiationconfinement region, and a surface region, a grating being etched at the interface between the confinement region and the surface region. Useful elementary bands of the junction for the attainment of the laser effect are fixed by proton implantation in the surface region of the junction. The elementary band-type regions are convergent and form, with the perpendicular to the grooves of the grating, angles that are determined so that the spacing along the various bands has a specified value linked directly to the wavelength of the corresponding emitted radiation.

• Assignee: Thomson-Csf S A (France)
• Patent Number(s): US 4309667
• OSTI ID: 5709835
• Resource Relation: Patent Priority Date: Priority date 17 Feb 1978, France; Other Information: PAT-APPL-011926
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
AMPLIFICATION
ELECTRODES
GALLIUM ARSENIDES
LASER RADIATION
RESONATORS
SUBSTRATES
WAVELENGTHS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
EQUIPMENT
GALLIUM COMPOUNDS
LASERS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)