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Locking bandwidth of actively mode-locked semiconductor lasers

Journal Article · · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/3.234426· OSTI ID:5708470

The locking bandwidth of an actively mode-locked semiconductor laser is a measure of its tolerance to variations in the input drive frequency. At frequencies outside the locking bandwidth, the output pulses from the laser exhibit large amplitude fluctuations and timing jitter. This paper investigates the locking bandwidths of fundamentally driven and harmonically driven high-repetition-rate actively mode-locked semiconductor lasers. The authors show that the locking bandwidth is maximized when the cavity length is minimized. The locking bandwidth is related to an important constant, the pull-in time. Experimental data and numerical modeling show that the pull-in time is a function of the optical bandwidth of the system and the RF drive level.

OSTI ID:
5708470
Journal Information:
IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 29:6; ISSN 0018-9197; ISSN IEJQA7
Country of Publication:
United States
Language:
English

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