Sputtered Schottky barrier solar cells on p-type GaAs

Journal Article · Thu Sep 15 04:00:00 EDT 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94429· OSTI ID:5705153

Edweeb, M E; Charlson, E J; Charlson, E M

Schottky barrier solar cells have been produced on single crystal p-type GaAs by sputtering gold to form the barrier. The rectifying action for the gold sputtered p-type device is unique to the method since normal thermal evaporated gold onto p-type produced Ohmic contacts. The opposite behavior was observed for n-type GaAs. Barrier heights have been measured for both p-type (sputtered) and n-type (thermal) diodes using current-voltage and capacitance-voltage methods and are 0.90 and 0.95 eV, respectively. The power conversion efficiencies without AR coatings have values of 6.56% (p) and 5.58% (n). Deep level transient spectroscopy has been used to identify the trap center concentrations and energy levels for both diodes to account for the relatively large dark currents in the p-type (sputtered) diodes.

• Research Organization: Electrical Engineering Department, University of Missouri-Columbia, Missouri 65211
• OSTI ID: 5705153
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
CRYSTALS
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
MATERIALS
METALS
MONOCRYSTALS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
POTENTIALS
RECTIFIERS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SORPTIVE PROPERTIES
SPUTTERING
SURFACE PROPERTIES
TRANSITION ELEMENTS
TRAPS