Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell
Journal Article
·
· J. Appl. Phys.; (United States)
The minority carrier lifetime in a phosphorous-diffused layer of a conventional N/sup +//P silicon photocell has been investigated experimentally. The photovoltages have been measured as a function of photon flux density from low to medium illumination levels. From the quasi-Fermi level analysis of Gray-Kao-Schroder, we have determined the carrier recombination lifetime as a function of the photogeneration rate in the heavily-doped N/sup +/ layer. When the band gap narrowing effect is taken into consideration, the recombination processes can be described by (i) a ''positive-field controlled'' Shockley-Reed-Hall recombination at low photo injection level, (ii) a ''positive-field influenced'' Auger recombination at the medium injection level, and (iii) a ''negative-field controlled'' Auger recombination at the high injection level. Under a very high photoexcitation condition, the magnitude of the saturated open circuit voltage of the cell is limited by the recombination lifetime at the surface contact region.
- Research Organization:
- Mobil Tyco Solar Energy Corporation, 16 Hickory Drive, Waltham, Massachusetts 02254
- OSTI ID:
- 5702172
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:1; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
AUGER EFFECT
CHARGE CARRIERS
CONTROL
DATA
DIFFUSION
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
ELECTRIC FIELDS
ENERGY LEVELS
EQUIPMENT
FERMI LEVEL
INFORMATION
JUNCTIONS
LAYERS
LIFETIME
MATERIALS
MATHEMATICAL MODELS
N-TYPE CONDUCTORS
NUMERICAL DATA
P-TYPE CONDUCTORS
PHOSPHORUS ADDITIONS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
THEORETICAL DATA
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
AUGER EFFECT
CHARGE CARRIERS
CONTROL
DATA
DIFFUSION
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
ELECTRIC FIELDS
ENERGY LEVELS
EQUIPMENT
FERMI LEVEL
INFORMATION
JUNCTIONS
LAYERS
LIFETIME
MATERIALS
MATHEMATICAL MODELS
N-TYPE CONDUCTORS
NUMERICAL DATA
P-TYPE CONDUCTORS
PHOSPHORUS ADDITIONS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
THEORETICAL DATA