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Title: Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

Abstract

The minority carrier lifetime in a phosphorous-diffused layer of a conventional N/sup +//P silicon photocell has been investigated experimentally. The photovoltages have been measured as a function of photon flux density from low to medium illumination levels. From the quasi-Fermi level analysis of Gray-Kao-Schroder, we have determined the carrier recombination lifetime as a function of the photogeneration rate in the heavily-doped N/sup +/ layer. When the band gap narrowing effect is taken into consideration, the recombination processes can be described by (i) a ''positive-field controlled'' Shockley-Reed-Hall recombination at low photo injection level, (ii) a ''positive-field influenced'' Auger recombination at the medium injection level, and (iii) a ''negative-field controlled'' Auger recombination at the high injection level. Under a very high photoexcitation condition, the magnitude of the saturated open circuit voltage of the cell is limited by the recombination lifetime at the surface contact region.

Authors:
Publication Date:
Research Org.:
Mobil Tyco Solar Energy Corporation, 16 Hickory Drive, Waltham, Massachusetts 02254
OSTI Identifier:
5702172
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 53:1
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; CHARGE CARRIERS; AUGER EFFECT; CONTROL; DIFFUSION; DOPED MATERIALS; ELECTRIC FIELDS; FERMI LEVEL; JUNCTIONS; LAYERS; LIFETIME; MATHEMATICAL MODELS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOSPHORUS ADDITIONS; PHOTOVOLTAIC EFFECT; RECOMBINATION; THEORETICAL DATA; ALLOYS; DATA; DIRECT ENERGY CONVERTERS; ENERGY LEVELS; EQUIPMENT; INFORMATION; MATERIALS; NUMERICAL DATA; PHOTOELECTRIC CELLS; PHOTOELECTROMAGNETIC EFFECTS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Ho, C. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell. United States: N. p., 1982. Web. doi:10.1063/1.329955.
Ho, C. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell. United States. doi:10.1063/1.329955.
Ho, C. Fri . "Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell". United States. doi:10.1063/1.329955.
@article{osti_5702172,
title = {Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell},
author = {Ho, C.},
abstractNote = {The minority carrier lifetime in a phosphorous-diffused layer of a conventional N/sup +//P silicon photocell has been investigated experimentally. The photovoltages have been measured as a function of photon flux density from low to medium illumination levels. From the quasi-Fermi level analysis of Gray-Kao-Schroder, we have determined the carrier recombination lifetime as a function of the photogeneration rate in the heavily-doped N/sup +/ layer. When the band gap narrowing effect is taken into consideration, the recombination processes can be described by (i) a ''positive-field controlled'' Shockley-Reed-Hall recombination at low photo injection level, (ii) a ''positive-field influenced'' Auger recombination at the medium injection level, and (iii) a ''negative-field controlled'' Auger recombination at the high injection level. Under a very high photoexcitation condition, the magnitude of the saturated open circuit voltage of the cell is limited by the recombination lifetime at the surface contact region.},
doi = {10.1063/1.329955},
journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 53:1,
place = {United States},
year = {1982},
month = {1}
}