Thermoelectric properties of boron and boron phosphide CVD wafers

Journal Article · Wed Oct 01 04:00:00 EDT 1997 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1006/jssc.1997.7493· OSTI ID:569565

Kumashiro, Y; Yokoyama, T; Sato, A; Ando, Y ^[1]

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1. Yokohama National Univ. (Japan)

Electrical and thermal conductivities and thermoelectric power of p-type boron and n-type boron phosphide wafers with amorphous and polycrystalline structures were measured up to high temperatures. The electrical conductivity of amorphous boron wafers is compatible to that of polycrystals at high temperatures and obeys Mott`s T{sup -{1/4}} rule. The thermoelectric power of polycrystalline boron decreases with increasing temperature, while that of amorphous boron is almost constant in a wide temperature range. The weak temperature dependence of the thermal conductivity of BP polycrystalline wafers reflects phonon scattering by grain boundaries. Thermal conductivity of an amorphous boron wafer is almost constant in a wide temperature range, showing a characteristic of a glass. The figure of merit of polycrystalline BP wafers is 10{sup -7}/K at high temperatures while that of amorphous boron is 10{sup -5}/K.

• OSTI ID: 569565
• Journal Information: Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 1 Vol. 133; ISSN 0022-4596; ISSN JSSCBI
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
BORON PHOSPHIDES
GRAIN BOUNDARIES
POLYCRYSTALS
SCATTERING
TEMPERATURE DEPENDENCE
THERMAL CONDUCTIVITY
THERMOELECTRIC PROPERTIES