Epitaxial growth of rhombohedral boron phosphide single crystalline films by chemical vapor deposition

Journal Article · Wed Oct 01 04:00:00 EDT 1997 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1006/jssc.1997.7324· OSTI ID:569524

Kumashiro, Y; Yoshizawa, H; Yokoyama, T ^[1]

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1. Yokohama National Univ. (Japan)

Rhombohedral boron phosphide (B{sub 12}P{sub 2}) single crystalline films were grown at 1100{degrees}C by thermal decomposition of a B{sub 2}H{sub 6}-PH{sub 3}-H{sub 2} gas mixture. The crystal quality and orientation of the films, determined by reflection high-energy electron diffraction and X-ray diffraction, are strongly influenced by the flow rates of reactant gases. The epitaxial relationships are B{sub 12}P{sub 2} (11{bar 2}0)[0001] {parallel} Si (100)[010], [011] and B{sub 12}P{sub 2} (10{bar 1}1)[1{bar 2}10], [10{bar 1}4] {parallel} Si (100)[010], of eight- and twofold symmetry, respectively. The distribution of the two planes in the films changes along the growth direction. The epitaxial relationship on the Si(111) surface is B{sub 12}P{sub 2} (1010)[0001] {parallel} Si (111)[110]. The B{sub 12}P{sub 2} (02{bar 2}1) plane grows near the substrate, but the existence of the (10{bar 1}0) plane increases during the crystal growth process. The optimum flow rates of B{sub 2}H{sub 6} and PH{sub 3} are 30 sccm for the best epitaxy, which occurs for the lowest mismatch.

• OSTI ID: 569524
• Journal Information: Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 1 Vol. 133; ISSN 0022-4596; ISSN JSSCBI
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON PHOSPHIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
ELECTRON DIFFRACTION
HARDNESS
MELTING POINTS
X-RAY DIFFRACTION