An analysis of alpha-particle-induced soft errors in high-density dynamic random-access memory arrays

Miscellaneous · Sun Jan 01 00:00:00 EST 1989

OSTI ID:5692622

Perry, R J

The effect of alpha-particle-induced soft errors on the reliability of high-density dynamic random-access memory (DRAM) arrays is investigated. The work is unique from previous analyses because it accounts for technological advancements used in high-density DRAM arrays such as trench memory cells, complementary-metal-oxide-semiconductor (CMOS) process technology, and novel bitline structures. An equivalent circuit model of the DRAM array is developed by making simplifications to the semiconductor device equations. This approach allows the analyses of numerous cell configurations to be performed without the complexity of numerical semiconductor device simulations. However, a numerical semiconductor device simulator is developed to verify the circuit models and to investigate the charge collection process. The analyses are applied to the development of design techniques which increases an array's alpha-particle immunity. The design techniques are also examined to determine their effect on related circuit performance parameters.

• Research Organization: Georgia Inst. of Tech., Atlanta, GA (USA)
• OSTI ID: 5692622
• Resource Relation: Other Information: Thesis (Ph. D.)
• Country of Publication: United States
• Language: English

Related Subjects

99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
MEMORY DEVICES
RELIABILITY
ALPHA PARTICLES
COMPUTERIZED SIMULATION
DESIGN
ERRORS
INTEGRATED CIRCUITS
PERFORMANCE
SEMICONDUCTOR DEVICES
USES
CHARGED PARTICLES
ELECTRONIC CIRCUITS
MICROELECTRONIC CIRCUITS
SIMULATION
990200* - Mathematics & Computers