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Preparation of a high- J sub c Y-Ba-Cu-O film at 700 degree C by thermal chemical vapor deposition

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.347491· OSTI ID:5691710
; ; ; ;  [1]; ;  [2]
  1. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan (JP)
  2. Riken Co., 810 Kumagaya, Kumagaya 360, Japan (JP)
A high-{ital J}{sub {ital c}} Y-Ba-Cu-O superconducting film was successfully prepared at 700 {degree}C on a SrTiO{sub 3}(100) single-crystal substrate without postannealing by thermal chemical vapor deposition under a low-oxygen partial pressure of 0.036 Torr in the total gas introduced into a hot-wall-type reactor (total gas pressure: 10 Torr), using 1% O{sub 2} balanced with Ar as a reactant gas. The sources for the elements of Ba, Y, and Cu were {beta}-diketone metal chelates. The film mainly consisted of YBa{sub 2}Cu{sub 3}O{sub {ital x}} with {ital c}-axis orientation perpendicular to the substrate plane and included small amounts of {ital a}-axis oriented and randomly oriented grains. The film showed the superconducting transition temperature defined by zero resistivity at 89 K. The critical current density based on a 2 {mu}V/cm criterion was 2.2 {times} 10{sup 6} A/cm{sup 2} at 77.3 K and 0 T.
OSTI ID:
5691710
Journal Information:
Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:11; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English