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Josephson tunneling and gap structure in Y sub 1 Ba sub 2 Cu sub 3 O sub 7 minus y /oxide barrier/Pb planar junctions on tetragonal LaSrGaO sub 4 (100) substrates

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.347597· OSTI ID:5689261
;  [1];  [2]
  1. Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan (JP)
  2. Materials Laboratory, Komatsu Ltd., 1200 Manda, Hiratsuka, Kanagawa 254, (Japan)

The Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7{minus}{ital y}}/oxide barrier/Pb thin film tunnel junctions are fabricated on the (100) plane of new tetragonal LaSrGaO{sub 4} single-crystal substrates by an {ital in} {ital situ} electron-beam deposition technique. Reproducible Josephson behavior is observed for all fabricated junctions. Above a Josephson critical current, a premature switching voltage of about 1 mV appears. The {ital I}-{ital V} curve under an applied magnetic field exhibits low-leakage quasiparticle tunneling characteristic. Modulation of Josephson critical current by the applied magnetic field yields a reversible Fraunhofer-like pattern against flux direction.

OSTI ID:
5689261
Journal Information:
Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:10; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English