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Pressure-dependent magnetism and electrical resistivity of UFe/sub 4/P/sub 12/

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)
UFe/sub 4/P/sub 12/ is the first reported uranium-based ferromagnetic semiconductor. The Curie temperature T/sub C/ is 3.15 K, and the spontaneous magnetic moment sigma/sub 0/ which at T = 1.14 K was found to be approx. =1.0 ..mu../sub B//(U atom), is associated entirely with the uranium ions. The electrical resistivity rho(T) increases by nearly 7 orders of magnitude as temperature is decreased from room temperature to 4.2 K. The behavior of the ferromagnetic and electrical properties of UFe/sub 4/P/sub 12/ in hydrostatic pressures up to 16 kbar is reported. Quasihydrostatic-pressure effects on rho(T) to 100 kbar are also reported. Although T/sub C/ increases sharply with increasing pressure at the rate dT/sub C//dP = 0.26 K/kbar (in contrast to similar data on the isomorphic ferromagnet NdFe/sub 4/P/sub 12/, where dT/sub C//dP = 0.03 K/kbar), sigma/sub 0/ decreases, (1/sigma/sub 0/)(dsigma/sub 0//dp) = -0.007 kbar/sup -1/. Hydrostatic and quasihydrostatic pressure have little effect on rho(T).
Research Organization:
Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, California 92093
OSTI ID:
5677680
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 36:16; ISSN PRBMD
Country of Publication:
United States
Language:
English