Injection lasers based on AlGaAsSb/GaSb and InGaAsSb/GaSb heterostructures
The operational and emission characteristics of injection lasers based on nonperiodic heterostructures are investigated. A study of the temperature dependence of threshold currents suggests that carrier leakage does not affect the heterolaser threshold currents up to room temperature however, considerable variations in threshold current values were observed for structures grown from different heteroepitaxial plates. In a InGaAsSb/GaSb laser an antiwaveguide phenomenon was observed, where an increasing carrier density caused the narrowing of the directivity pattern of the laser emission in the plane perpendicular to the p-n junction the phenomenon is suggested to be useful in some lasing modes, such as nonwaveguide diode modes and the transfer of radiation to a waveguide based on a wider-band material with a larger index of refraction. 22 references.
- OSTI ID:
- 5675014
- Journal Information:
- J. Sov. Laser Res.; (United States), Vol. 5
- Country of Publication:
- United States
- Language:
- English
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