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High quality Nb/Al-AlOx/Nb Josephson junction

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.95696· OSTI ID:5670145
We have improved the quality of Nb/Al-AlOx/Nb Josephson junctions and obtained the most excellent junction characteristics ever obtained for all refractory Josephson junctions. The V/sub m/ values (the product of the critical current and the subgap resistance measured at 2 mV) are 88 mV at the critical current density I/sub j/ = 500 A/cm/sup 2/ and 72 mV at I/sub j/ = 1000 A/cm/sup 2/. The V/sub m/ values are larger than 40 mV up to I/sub j/ of 2400 A/cm/sup 2/. The high V/sub m/ values are important to obtain the low subgap leakage current and not to reduce the transfer current to the load in Josephson circuit. These characteristics have been achieved by improving the quality of the Nb film and optimizing the Al thickness. We have also confirmed that I/sub j/ can be controlled by both the oxidation pressure and time in the range of 40--4600 A/cm/sup 2/.
Research Organization:
Electrotechnical Laboratory, 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaraki 305, Japan
OSTI ID:
5670145
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:12; ISSN APPLA
Country of Publication:
United States
Language:
English