Modeling and DLTS analysis of irradiated III-V multijunction solar cells. Final report, November 1984-October 1985
Technical Report
·
OSTI ID:5666638
The objective was to develop a simple theoretical model based on Wilson's model to calculate the displacement damages introduced by either protron or electron irradiation in AlGaAs, GaAs, InGaAs and Ge. These calculations would then be applied to obtain an optimized triple-junction solar-cell structure using these materials with a specified end of life conversion efficiency. Empirical formulae and theoretical expressions were derived for calculating the displacement cross section, penetration depth, path length, total number of defects formed by an incident electron or protron, and the fractional loss of electron-hole pairs due to recombination loss. Formulae to calculate the degradation of short-circuit current under different electron and proton fluences and energies in AlGaAs, GaAs, InGaAs, Ge single junction solar cells and the triple junction cells formed from these materials were developed. The results of our calculations indicate that the degradation rate in each cell varies greatly, and depends critically not only the energy, fluence, and the direction of the incident electrons and protons but also on the thickness of each cell in the triple-junction cells. Major difficulties encountered in performing the theoretical calculations using the model developed in this report included may unknown parameters and the lack of experimental data on electron and proton damages in the AlGaAs and InGaAs solar cells for comparison with theoretical calculations. These uncertainties can be removed once the actual cell structures for the proposed triple-junction cells are fabricated and measurements of radiation damage are made in these cells.
- Research Organization:
- Florida Univ., Gainesville (USA). Dept. of Electrical Engineering
- OSTI ID:
- 5666638
- Report Number(s):
- AD-A-167670/9/XAB
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CROSS SECTIONS
DAMAGE
DEPTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
EQUIPMENT
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
HADRONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
LENGTH
LEPTONS
LOSSES
METALS
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTONS
RADIATION EFFECTS
SOLAR CELLS
SOLAR EQUIPMENT
THICKNESS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CROSS SECTIONS
DAMAGE
DEPTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
EQUIPMENT
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
HADRONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
LENGTH
LEPTONS
LOSSES
METALS
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTONS
RADIATION EFFECTS
SOLAR CELLS
SOLAR EQUIPMENT
THICKNESS