Modeling and DLTS analysis of irradiated III-V multijunction solar cells. Final report, November 1984-October 1985
The objective was to develop a simple theoretical model based on Wilson's model to calculate the displacement damages introduced by either protron or electron irradiation in AlGaAs, GaAs, InGaAs and Ge. These calculations would then be applied to obtain an optimized triple-junction solar-cell structure using these materials with a specified end of life conversion efficiency. Empirical formulae and theoretical expressions were derived for calculating the displacement cross section, penetration depth, path length, total number of defects formed by an incident electron or protron, and the fractional loss of electron-hole pairs due to recombination loss. Formulae to calculate the degradation of short-circuit current under different electron and proton fluences and energies in AlGaAs, GaAs, InGaAs, Ge single junction solar cells and the triple junction cells formed from these materials were developed. The results of our calculations indicate that the degradation rate in each cell varies greatly, and depends critically not only the energy, fluence, and the direction of the incident electrons and protons but also on the thickness of each cell in the triple-junction cells. Major difficulties encountered in performing the theoretical calculations using the model developed in this report included may unknown parameters and the lack of experimental data on electron and proton damages in the AlGaAs and InGaAs solar cells for comparison with theoretical calculations. These uncertainties can be removed once the actual cell structures for the proposed triple-junction cells are fabricated and measurements of radiation damage are made in these cells.
- Research Organization:
- Florida Univ., Gainesville (USA). Dept. of Electrical Engineering
- OSTI ID:
- 5666638
- Report Number(s):
- AD-A-167670/9/XAB
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
GALLIUM ARSENIDES
GERMANIUM
INDIUM ARSENIDES
SOLAR CELLS
JUNCTIONS
CROSS SECTIONS
DAMAGE
DEPTH
ELECTRONS
LENGTH
LOSSES
PROTONS
THICKNESS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELEMENTARY PARTICLES
ELEMENTS
EQUIPMENT
FERMIONS
GALLIUM COMPOUNDS
HADRONS
INDIUM COMPOUNDS
LEPTONS
METALS
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
RADIATION EFFECTS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
360605 - Materials- Radiation Effects