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Title: Minority carrier lifetime in GaP grown by liquid phase epitaxy for high temperature applications

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.331106· OSTI ID:5659203

We have measured the minority carrier lifetime tau/sub min/ in liquid phase epitaxial GaP material grown for high-temperature device applications, as a function of doping concentration, temperature, and epitaxial layer thickness. In p-type GaP doped with Mg, tau/sub min/ remains constant with increasing carrier concentration until proughly-equal10/sup 18/ cm/sup -3/, where it decreases rapidly. For nominally undoped n-type material we find that tau/sub min/ increases by nearly one order of magnitude over the temperature range T = 22--600 /sup 0/C. The apparent lifetimes in these thin-layer materials increase with layer thickness indicating that surface and interface recombination are important.

Research Organization:
Sandia National Laboratories, Albuquerque, New Mexico 87185
DOE Contract Number:
AC04-76DP000789
OSTI ID:
5659203
Journal Information:
J. Appl. Phys.; (United States), Vol. 53:5
Country of Publication:
United States
Language:
English