Study of the stepwise oxidation and nitridation of Si(111) by electron stimulated desorption and Auger spectroscopy
Electron stimulated desorption (ESD) and Auger electron spectroscopy (AES) measurements are reported for the electron-activated stepwise oxidation and nitridation of the Si(111) surface. In ESD it is found that appreciable levels of surface hydrogen are present which can lead to hydroxyl formation upon oxidation. The hydroxyl-rich films are unstable in an electron beam, while surfaces oxidized with activated O/sub 2/, where no OH is formed, are much more stable. On the OH-free oxide, ESD shows two chemically distinct O species, one thought to be SiO/sub 2/ and the other either adsorbed O/sub 2/ or a chemical intermediate. The Auger spectra for both oxide and nitride films, which show a continual change from Si to Si-compound nature, suggests that in the earliest stages of reaction the reacted film is made up mainly of low coordination intermediates which gradually evolve to the full compound as the coordination increases.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- OSTI ID:
- 5658700
- Journal Information:
- J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 20:3; ISSN JVSTA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
400201* -- Chemical & Physicochemical Properties
AUGER ELECTRON SPECTROSCOPY
CHEMICAL REACTIONS
DESORPTION
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY RANGE
EV RANGE
EV RANGE 10-100
FILMS
FLUORINE
HALOGENS
HYDROGEN
HYDROXYL RADICALS
IMPURITIES
NITRIDATION
NITRIDES
NITROGEN
NITROGEN COMPOUNDS
NONMETALS
OXIDATION
OXYGEN
PNICTIDES
RADICALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SORPTIVE PROPERTIES
SPECTROSCOPY
STABILITY
SURFACE PROPERTIES