Synthesis of nanocrystalline diamond thin films from an Ar{endash}CH{sub 4} microwave plasma

Journal Article · Thu Jan 01 04:00:00 EST 1998 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.366668· OSTI ID:565633

Zhou, D; McCauley, T G; Qin, L C; Krauss, A R; Gruen, D M ^[1]

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1. Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

Nanocrystalline diamond thin films have been synthesized in an Ar{endash}CH{sub 4} microwave discharge, without the addition of molecular hydrogen. X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy characterizations show that the films consist of a pure crystalline diamond phase with very small grain sizes ranging from 3 to 20 nm. Atomic force microscopy analysis demonstrates that the surfaces of the nanocrystalline diamond films remain smooth independent of the film thicknesses. Furthermore, the reactant gas pressure, which strongly affects the concentration of C{sub 2} dimer in the Ar{endash}CH{sub 4} plasma as well as the growth rate of the films, has been found to be a key parameter for the nanocrystalline diamond thin film depositions. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 565633
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 83; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ARGON
CHEMICAL VAPOR DEPOSITION
DIAMONDS
GRAIN SIZE
HYDROGEN ADDITIONS
METHANE
MICROWAVE RADIATION
PLASMA
STRUCTURAL CHEMICAL ANALYSIS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION