Simple method for preparing hydrogenated amorphous silicon films by chemical vapor deposition at atmospheric pressure

Journal Article · Thu Sep 01 04:00:00 EDT 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332717· OSTI ID:5655400

Ellis, Jr, F B; Gordon, R G

An inexpensive one-step method is presented for fabricating hydrogenated amorphous silicon (a-Si:H) films with good photovoltaic properties using chemical vapor deposition (CVD) from a mixture of polysilanes, Si/sub n/H/sub 2n/+2, in hydrogen at atmospheric pressure. This gas mixture is generated by a simple chemical reaction and used immediately in the CVD process. Thus, the highly flammable polysilanes need not be handled, distilled, stored, or transported. The conditions necessary for high (about 10%) hydrogen incorporation are explained. The method requires no expensive vacuum or electrical equipment and permits very high deposition rates (50--100 A/s). It is shown that the growth rate of the film is determined by the gas-phase chemistry and not the surface chemistry. In addition a new, safe, and economical technique for phosphorus doping is described.

• Research Organization: Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 5655400
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DEPOSITION
DISPERSIONS
ELEMENTS
ENERGY
FABRICATION
FLUIDS
FREE ENERGY
GASES
HYDRIDES
HYDROGEN COMPOUNDS
HYDROGENATION
MEDIUM PRESSURE
MIXTURES
PHYSICAL PROPERTIES
POLYCRYSTALS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING
THERMODYNAMIC PROPERTIES
VAPORS