In/sub 0/ /sub 2/Ga/sub 0/ /sub 8/As/GaAs, modulation-doped, strained-layer superlattice field-effect transistor
For the first time, field-effect transistor action has been demonstrated in InGaAs/GaAs strained-layer superlattice (SLS) material. The samples, prepared by MBE, utilized 17 periods (repeat distance, 300A) of alternating, modulation-doped, In/sub 0/ /sub 2/Ga/sub 0/ /sub 8/As and GaAs layers to form the channel of the device. Gate control was realized by use of an Al Schottky diode on the top and a p-n junction diode, formed between the superlattice and a p-type In/sub 0/ /sub 1/Ga/sub 0/ /sub 9/As buffer layer, on the bottom. At room temperature a representative transistor with a 2.5 ..mu..m gate length displayed a characteristic drain saturation current, I/sub DSS/, of 64 mA (V/sub DS/ = 4V, V/sub GS/ = OV), a double-gate pinchoff voltage, Vp, of 3.1V(V/sub DS/ = 4V, I/sub D/ = 5% of I/sub DSS/) and a maximum, double-gate, normalized, extrinsic transconductance, g/sub mo/, of 84mS/mm (V/sub DS/ = 4V). At 77K, I/sub DSS/ increased to 98mA, Vp remained approximately constant at 3.2V, and g/sub mo/ increased to 140mS/mm.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5653908
- Report Number(s):
- SAND-83-1657C; CONF-831243-1; ON: DE84000136
- Country of Publication:
- United States
- Language:
- English
Similar Records
GaN Metal Oxide Semiconductor Field Effect Transistors
Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches
Related Subjects
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DOPED MATERIALS
ELECTRICAL PROPERTIES
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LOW TEMPERATURE
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SUPERLATTICES
TRANSISTORS