Perturbation analysis of bistability and period doubling bifurcations in directly-modulated laser diodes

Journal Article · Fri Sep 01 00:00:00 EDT 1989 · IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA)

DOI:https://doi.org/10.1109/3.35224· OSTI ID:5653838

Yoon, T H ^[1]; Lee, C H; Shin, S Y ^[2]

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1. Dept. of Electronics Engineering, Pusan National Univ., Pusan (KR)
2. Dept. of Electrical Engineering, Korea Advanced Institute of Science and Technology, Seoul (KR)

Resonance frequency shift, bistability, and period doubling bifurcations in directly-modulated semiconductor lasers are accounted for by applying multiple scale expansions to the rate equations that take into account spontaneous emission and gain saturation. Explicit algebraic expressions of parameter ranges for resonance frequency shift, bistability, and period 2 and period 4 oscillations are derived, and they are compared with results of numerical calculations. The authors also explain physical mechanisms of resonance frequency shift and period doubling bifurcations.

• OSTI ID: 5653838
• Journal Information: IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA), Journal Name: IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA) Vol. 25:9; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
DISTURBANCES
EMISSION SPECTRA
FREQUENCY MODULATION
GAIN
LASERS
MODULATION
NUMERICAL SOLUTION
OSCILLATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA