Polymer chain structure in ultrathin films. Technical report, 1 June 1988-31 May 1989

Technical Report · Sun Jan 01 04:00:00 EST 1989

OSTI ID:5653065

Kuan, S W; Martin, P S; Frank, C W; Pease, R F

As the dimensions of integrated circuits have been shrinking, the desired resolution will soon be beyond the limit of conventional ultraviolet (UV) lithography. Deep UV and X radiation, high-energy electron beams and low-energy scanning tunneling microscopy (STM) have been proposed as possible exposure systems for the next generation high resolution lithography. In order to enhance efforts for the improvement of new exposure systems, appropriate resist materials, preparation methods and processing parameters become the key factors. In optical lithography the resolution is limited by resist absorption, light diffraction, and rheological effects related to the resist development process. In electron beam lithography, the major limitation on the resolution is imposed by electron scattering (proximity effect) which causes a nonuniform incident exposure in the pattern area.

• Research Organization: Stanford Univ., CA (USA)
• OSTI ID: 5653065
• Report Number(s): AD-A-208793/0/XAB; TR--20
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ABSORPTION
BEAMS
COHERENT SCATTERING
DIFFRACTION
DOCUMENT TYPES
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FILMS
INTEGRATED CIRCUITS
LEPTON BEAMS
MICROELECTRONIC CIRCUITS
MOLECULAR STRUCTURE
OPTICAL PROPERTIES
PARTICLE BEAMS
PHYSICAL PROPERTIES
POLYMERS
PROCESSING
PROGRESS REPORT
RADIATIONS
RESOLUTION
RHEOLOGY
SCATTERING
THIN FILMS
ULTRAVIOLET RADIATION