The magnetron-enhanced etching of double-level tungsten interconnect

Conference · Tue May 28 00:00:00 EDT 1991

OSTI ID:5652788

Hsu, R; Fu, C Y; Law, B

The DC magnetron sputtered tungsten (W) and molybdenum (Mo) were evaluated for double-level interconnect. The combined Cl{sub 2} and NF{sub 3} chemistry was chosen over either gas or SiCl{sub 4} for magnetron-enhanced etching to achieve better etch selectivity and profile. Tungsten was picked over Mo for more vertical walls. The etch rate of W depended strongly on sputtering conditions. Reasonably high etch rate at 400 nm/min was obtained with selectivity to resist at about 1.4 to 1 Adhesion layer of 30 nm of TiW or Ta added to either M1 or M2 could be etched by the same recipe. The vertical profile achieved was found independent of feature size and had a large window in RF power, temperature and over etch time. This process has been successfully applied to define patterns for a double- level interconnect structure. 9 refs., 8 figs.

• Research Organization: Lawrence Livermore National Lab., CA (USA)
• Sponsoring Organization: DOE; USDOE, Washington, DC (USA)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 5652788
• Report Number(s): UCRL-JC-105487; CONF-9105224--1; ON: DE91014984
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
ETCHING
MAGNETRONS
METALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
MOLYBDENUM
SPUTTERING
SURFACE FINISHING
TRANSITION ELEMENTS
TUNGSTEN