Effect of extrinsic electric fields upon dielectronic recombination: Mg/sup 1 +/

Journal Article · Mon Aug 15 04:00:00 EDT 1983 · Phys. Rev. Lett.; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.51.558· OSTI ID:5650994

LaGattuta, K; Hahn, Y

Recently, large discrepancies have appeared between theoretical predictions and experimental measurements of dielectronic recombination cross sections (sigma/sup DR/) for Mg/sup 1 +/ targets. This disagreement has provoked new work aimed at understanding, more fully, the effect of applied fields upon the dielectronic recombination process. This Letter reports calculations of sigma/sup DR/ for Mg/sup 1 +/ in a small applied electric field. The field effect is large enough to bring the experimental sigma/sup DR/ into much closer agreement with the theory.

• Research Organization: Physics Department, University of Connecticut, Storrs, Connecticut 06268
• OSTI ID: 5650994
• Journal Information: Phys. Rev. Lett.; (United States), Journal Name: Phys. Rev. Lett.; (United States) Vol. 51:7; ISSN PRLTA
• Country of Publication: United States
• Language: English

Related Subjects

640302* -- Atomic
Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
74 ATOMIC AND MOLECULAR PHYSICS
CATIONS
CHARGED PARTICLES
CROSS SECTIONS
DATA
ELECTRIC FIELDS
ENERGY-LEVEL TRANSITIONS
EXCITATION
INFORMATION
IONS
MAGNESIUM IONS
NUMERICAL DATA
RECOMBINATION
TARGETS
THEORETICAL DATA