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Title: An angle-resolved, wavelength-dispersive x-ray fluorescence spectrometer for depth profile analysis of ion-implanted semiconductors using synchrotron radiation

Journal Article · · Review of Scientific Instruments; (United States)
DOI:https://doi.org/10.1063/1.1143080· OSTI ID:5646316
; ;  [1];  [2]
  1. Physikalisches Institut der Universitaet Bonn, Nussallee 12, D-5300 Bonn 1 (Germany)
  2. Forschungsinstitut der Deutschen Bundespost TELEKOM, Am Kavalleriesand 3, D-6100 Darmstadt (Germany)

An apparatus for angle-resolved, wavelength-dispersive x-ray fluorescence spectroscopy with synchrotron radiation has been built and tested at the beam line BN2 of the Bonn electron stretcher and accelerator (ELSA). The apparatus is to be used for nondestructive depth profile analysis of ion-implanted semiconductors as part of the multinational Versailles Project of Advanced Materials and Standards (VAMAS) project on ion-implanted reference materials. In particular, the centroid depths of depth profiles of various implants is to be determined by use of the angle-resolved signal ratio technique. First results of measurements on implants of phosphorus (100 keV, 10{sup 16} cm{sup {minus}2}) and sulfur (200 keV, 10{sup 14} cm{sup {minus}2}) in silicon wafers using white'' synchrotron radiation are presented and suggest that it should be generally possible to measure the centroid depth of an implant at dose densities as low as 10{sup 14} cm{sup {minus}2}. Some of the apparative and technical requirements are discussed which are peculiar to the use of synchrotron radiation in general and to the use of nonmonochromatized radiation in particular.

OSTI ID:
5646316
Journal Information:
Review of Scientific Instruments; (United States), Vol. 63:1; ISSN 0034-6748
Country of Publication:
United States
Language:
English

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