Heterojunction by photoelectrochemical surface transformation: n: CulnSe/sub 2//p-CulSe/sub 3/Se/sup 0/

Journal Article · Sat Dec 01 04:00:00 EST 1984 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2115465· OSTI ID:5637479

Menezes, S; Bachmann, K J; Betz, G; Kotz, R; Lewerenz, H J

Heterojunction formation by photoelectrochemical alteration of semiconductor surfaces is reported. Growth of a new semiconducting phase at the n-CuInSe/sub 2//I/sup -/-I/sub 2/-Cu/sup +/ interface is achieved by controlling electrochemical parameters. The interfacial layer is identified as CuISe/sub 3/Se/sup 0/ and exhibits p-type conductivity. Under illumination the interphase mediates efficient charge transfer between CuInSe/sub 2/ and the I/sup -//I/sub 2/ redox couple while inhibiting semiconductor dissolution.

• Research Organization: Hahn-Meitner-Institut fur Kernforschung Berlin, Bereich Strahlenchemie, Berlin
• OSTI ID: 5637479
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 131:12; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140505* -- Solar Energy Conversion-- Photochemical
Photobiological
& Thermochemical Conversion-- (1980-)
36 MATERIALS SCIENCE
360102 -- Metals & Alloys-- Structure & Phase Studies
CHALCOGENIDES
COPPER COMPOUNDS
COPPER SELENIDES
CRYSTAL GROWTH
CRYSTAL-PHASE TRANSFORMATIONS
ELECTROCHEMICAL CELLS
ELECTROLYTES
EQUIPMENT
FABRICATION
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM SELENIDES
INTERFACES
JUNCTIONS
MATERIALS
P-TYPE CONDUCTORS
PHASE TRANSFORMATIONS
PHOTOELECTROCHEMICAL CELLS
REDOX POTENTIAL
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR EQUIPMENT
SURFACE PROPERTIES
TRANSITION ELEMENT COMPOUNDS