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Title: Optical amplifier operating at 1.3 microns useful for telecommunications and based on dysprosium-doped metal chloride host materials

Abstract

Dysprosium-doped metal chloride materials offer laser properties advantageous for use as optical amplifiers in the 1.3 {micro}m telecommunications fiber optic network. The upper laser level is characterized by a millisecond lifetime, the host material possesses a moderately low refractive index, and the gain peak occurs near 1.31 {micro}m. Related halide materials, including bromides and iodides, are also useful. The Dy{sup 3+}-doped metal chlorides can be pumped with laser diodes and yield 1.3 {micro}m signal gain levels significantly beyond those currently available. 9 figs.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
University of California
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
563702
Patent Number(s):
US 5,694,500/A/
Application Number:
PAN: 8-546,851
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 426002; PA: EDB-98:015804; SN: 98001896325
DOE Contract Number:
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 2 Dec 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; LASER MATERIALS; DOPED MATERIALS; DYSPROSIUM IONS; FIBER OPTICS; USES; COMMUNICATIONS; CHLORIDES; OPTICAL PUMPING

Citation Formats

Page, R.H., Schaffers, K.I., Payne, S.A., Krupke, W.F., and Beach, R.J. Optical amplifier operating at 1.3 microns useful for telecommunications and based on dysprosium-doped metal chloride host materials. United States: N. p., 1997. Web.
Page, R.H., Schaffers, K.I., Payne, S.A., Krupke, W.F., & Beach, R.J. Optical amplifier operating at 1.3 microns useful for telecommunications and based on dysprosium-doped metal chloride host materials. United States.
Page, R.H., Schaffers, K.I., Payne, S.A., Krupke, W.F., and Beach, R.J. 1997. "Optical amplifier operating at 1.3 microns useful for telecommunications and based on dysprosium-doped metal chloride host materials". United States. doi:.
@article{osti_563702,
title = {Optical amplifier operating at 1.3 microns useful for telecommunications and based on dysprosium-doped metal chloride host materials},
author = {Page, R.H. and Schaffers, K.I. and Payne, S.A. and Krupke, W.F. and Beach, R.J.},
abstractNote = {Dysprosium-doped metal chloride materials offer laser properties advantageous for use as optical amplifiers in the 1.3 {micro}m telecommunications fiber optic network. The upper laser level is characterized by a millisecond lifetime, the host material possesses a moderately low refractive index, and the gain peak occurs near 1.31 {micro}m. Related halide materials, including bromides and iodides, are also useful. The Dy{sup 3+}-doped metal chlorides can be pumped with laser diodes and yield 1.3 {micro}m signal gain levels significantly beyond those currently available. 9 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 1997,
month =
}
  • Dysprosium-doped metal chloride materials offer laser properties advantageous for use as optical amplifiers in the 1.3 .mu.m telecommunications fiber optic network. The upper laser level is characterized by a millisecond lifetime, the host material possesses a moderately low refractive index, and the gain peak occurs near 1.31 .mu.m. Related halide materials, including bromides and iodides, are also useful. The Dy.sup.3+ -doped metal chlorides can be pumped with laser diodes and yield 1.3 .mu.m signal gain levels significantly beyond those currently available.
  • Doped electrically actuatable (electrically addressable or switchable) polymer flakes have enhanced and controllable electric field induced motion by virtue of doping a polymer material that functions as the base flake matrix with either a distribution of insoluble dopant particles or a dopant material that is completely soluble in the base flake matrix. The base flake matrix may be a polymer liquid crystal material, and the dopants generally have higher dielectric permittivity and/or conductivity than the electrically actuatable polymer base flake matrix. The dopant distribution within the base flake matrix may be either homogeneous or non-homogeneous. In the latter case, themore » non-homogeneous distribution of dopant provides a dielectric permittivity and/or conductivity gradient within the body of the flakes. The dopant can also be a carbon-containing material (either soluble or insoluble in the base flake matrix) that absorbs light so as to reduce the unpolarized scattered light component reflected from the flakes, thereby enhancing the effective intensity of circularly polarized light reflected from the flakes when the flakes are oriented into a light reflecting state. Electro-optic devices contain these doped flakes suspended in a host fluid can be addressed with an applied electric field, thus controlling the orientation of the flakes between a bright reflecting state and a non-reflecting dark state.« less
  • The invention provides an efficient, compact means of generating blue laser light at a wavelength near .about.493+/-3 nm, based on the use of a laser diode-pumped Yb-doped laser crystal emitting on its zero phonon line (ZPL) resonance transition at a wavelength near .about.986+/-6 nm, whose fundamental infrared output radiation is harmonically doubled into the blue spectral region. The invention is applied to the excitation of biofluorescent dyes (in the .about.490-496 nm spectral region) utilized in flow cytometry, immunoassay, DNA sequencing, and other biofluorescence instruments. The preferred host crystals have strong ZPL fluorecence (laser) transitions lying in the spectral range frommore » .about.980 to .about.992 nm (so that when frequency-doubled, they produce output radiation in the spectral range from 490 to 496 nm). Alternate preferred Yb doped tungstate crystals, such as Yb:KY(WO.sub.4).sub.2, may be configured to lase on the resonant ZPL transition near 981 nm (in lieu of the normal 1025 nm transition). The laser light is then doubled in the blue at 490.5 nm.« less
  • A method for the chemical vapor deposition of amorphous, glass-like, phosphorous-nitrogen based films on the surface of a substrate is disclosed. The process entails exposing the substrate to a reactant gas stream comprising phosphorous, nitrogen and hydrogen. This method is particularly suited for passivating Group III-V semiconductor materials.