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/sup 32/Si from /sup 30/Si(t,p)

Journal Article · · Phys. Rev. C; (United States)
In the /sup 30/Si(t,p) reaction at a bombarding energy of 15.0 MeV, excitation energies have been measured for 53 levels up to E/sub x/ = 11.5 MeV. Angular distributions for 29 levels below 8.8 MeV have been compared with distorted-wave Born-approximation calculations in order to make L (and hence J/sup ..pi../) assignments. Measured cross sections are compared with absolute predictions with distorted-wave Born approximation calculations that use two-nucleon transfer amplitudes from a full sd- shell-basis shell-model calculation.
Research Organization:
Physics Department, University of Pennsylvania, Philadelphia, Pennsylvania 19104
OSTI ID:
5633696
Journal Information:
Phys. Rev. C; (United States), Journal Name: Phys. Rev. C; (United States) Vol. 25:1; ISSN PRVCA
Country of Publication:
United States
Language:
English