Relation between the cooling time in the film-growth process of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} and the electrical properties of bicrystal Josephson junctions
- Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 (Japan)
We have studied the film deposition condition for bicrystal Josephson junctions to obtain reliable device parameters I{sub c} and R{sub n} at 77 K. In addition, it was found that the cooling time in the film-growth process of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} was a very important factor to determine the electrical properties of bicrystal Josephson junctions with the misorientation angle {theta}=36.8{degree}. In the three regions of the cooling time as 5{endash}6, 10{endash}20, and more than 30 min, the junctions{close_quote} T{sub c} were above 87, 50{endash}86, and above 86 K, and the average values of the I{sub c}R{sub n} products at 77 K were 0.12 mV, 50 {mu}V, and 80 {mu}V, respectively. The junction parameters and the shapes of the I{endash}V curves were changed due to the change of the cooling time. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 563152
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 70; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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