Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

Patent · 12 September 1984

OSTI ID:5624059

Ciszek, T F

Apparatus is provided for continuously forming a silicon crystal sheet from a silicon rod in a non-crucible environment. The rod is rotated and fed toward an RF coil in an inert atmosphere so that the upper end of the rod becomes molten and the silicon sheet crystal is pulled therefrom substantially horizontally in a continuous strip. A shorting ring may be provided around the rod to limit the heating to the upper end only. Argon gas can be used to create the inert atmosphere within a suitable closed chamber. By use of this apparatus and method, a substantially defect-free silicon crystal sheet is formed which can be used for micro-circuitry chips or solar cells.

• DOE Contract Number: AC02-83CH10093
• Assignee: Dept. of Energy
• Patent Number(s): None
• Application Number: ON: DE85011588
• OSTI ID: 5624059
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARGON
CRYSTAL GROWTH
ELEMENTS
FLUIDS
GASES
NONMETALS
RARE GASES
RF SYSTEMS
SEMIMETALS
SILICON