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Elevated temperature mechanical behavior of monolithic and SiC whisker-reinforced silicon nitrides

Technical Report ·
OSTI ID:5620861
The mechanical behavior of a 30 volume percent SiC whisker reinforced silicon nitride and a similar monolithic silicon nitride were measured at several temperatures. Measurements included strength, fracture toughness, crack growth resistance, dynamic fatigue susceptibility, post oxidation strength, and creep rate. Strength controlling defects were determined with fractographic analysis. The addition of SiC whiskers to silicon nitride did not substantially improve the strength, fracture toughness, or crack growth resistance. However, the fatigue resistance, post oxidation strength, and creep resistance were diminished by the whisker addition.
Research Organization:
National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
OSTI ID:
5620861
Report Number(s):
N-92-15192; NASA-TM--105245; E--6572; NAS--1.15:105245
Country of Publication:
United States
Language:
English