Conception and design criteria of a novel silicon device for the measurement of position and energy of x rays
Journal Article
·
· IEEE Transactions on Nuclear Science
- Univ. degli Studi, Milano (Italy). Dept. di Fisica
- Politecnico di Milano (Italy). Dept. di Elettronica
- Brookhaven National Lab., Upton, NY (United States)
- Max-Planck-Inst. Halbleiterlabor, Muenchen (Germany)
In this paper the authors present the working principle and the design criteria of the Controlled-Drift Detector, a novel device suitable for the simultaneous measurement of energy and two-dimensional position of X-rays. In the Controlled-Drift Detector the pixel structure typical of a charge-coupled device and the fast readout typical of a silicon drift detector are joined. When the radiation is to be detected, suitable potential barriers are generated to prevent the drift of the signal electrons that are confined within a matrix of integration wells. The potential barrier which prevents the drift is selectively removable to allow the fast transport of the confined signal electrons to the readout electrodes by means of a static drift field. In principle such a device can achieve excellent energy resolution and readout times of some tens of microseconds. Three different confining mechanisms that allow control of the drift of the stored electrons are studied, and their advantages and drawbacks are discussed. First prototypes of the Controlled-Drift Detector are currently in production.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY
- Sponsoring Organization:
- Istituto Nazionale di Fisica Nucleare, Rome (Italy); USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 562060
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 5 Vol. 44; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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