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Interface formation of semiconductors with high-T/sub c/ superconductors: Ge/La/sub 1. 85/Sr/sub 0. 15/CuO/sub 4/

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)

Inverse photoemission has been used to probe the microscopic evolution of the semiconductor/superconductor interface Ge/La/sub 1.85/Sr/sub 0.15/CuO/sub 4/. We find little or no reaction until the Ge coverage reaches 1 A and that the reaction is quickly saturated when the nominal coverage reaches approx.6 A. The reaction is characterized by the reduction of the Cu 3d--O 2p antibonding electronic states straddling the Fermi level and the shift of La 4f and 5d empty-state features toward E/sub F/. Large apparent electron mean free paths deduced from the attenuation of La peaks suggest cluster and island formation in the Ge/La/sub 1.85/Sr/sub 0.15/CuO/sub 4/ interface.

Research Organization:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
OSTI ID:
5619623
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 37:1; ISSN PRBMD
Country of Publication:
United States
Language:
English