Resonant, dispersive optical tuning in an epitaxial (Al,Ga)As Fabry--Perot etalon

Journal Article · Mon Jan 04 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99331· OSTI ID:5618128

Gourley, P L; Drummond, T J

We report optical tuning (an optically induced shift of the transmittance peak) of an epitaxial Fabry--Perot etalon comprising AlAs/AlGaAs quarter-wave high reflectors surrounding a GaAs/AlGaAs multiple quantum well spacer layer. The reflectors and spacer were produced in a single growth process by using molecular beam epitaxy. Low-power cw reflection and trasmittance spectra as well as higher power pulsed trasmittance spectra were measured at room temperature. A very sharp (approx.20 A full width at half-maximum) Fabry--Perot transmittance peak was observed near the resonant exciton wavelength (8500 A) at room temperature. The tuning of this transmittance mode under pulsed optical excitation is as large as 27 A. These results indicate that very large on/off switching ratios (approx.10:1) can be achieved with these structures.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5618128
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL EQUIPMENT
EPITAXY
EQUIPMENT
EXCITONS
FILMS
FILTERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INTERFERENCE
JUNCTIONS
LAYERS
LIGHT TRANSMISSION
OPERATION
OPTICAL FILTERS
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR JUNCTIONS
SWITCHES
THIN FILMS
TUNING