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Semiconducting properties of Li/sub 0. 33/MoO/sub 3/

Journal Article · · Inorg. Chem.; (United States)
DOI:https://doi.org/10.1021/ic00275a003· OSTI ID:5616269

The bottom d-block band electronic structure of Li/sub 0.33/MoO/sub 3/ was derived on the basis of tight-binding band calculations on the Mo/sub 6/O/sub 24/ chains that constitute Li/sub 0.33/MoO/sub 3/. The distortions of the MoO/sub 6/ octahedra in Li/sub 0.33/MoO/sub 3/ were analyzed from the viewpoint of the O-Mo/hor ellipsis/O bond alternation so as to deduce how the t/sub 2g/-level degeneracy of a regular MoO/sub 6/ octahedron is lifted. This analysis was found to be a convenient way of understanding the nature of the bottom d-block bands of Li/sub 0.33/MoO/sub 3/. This study suggests that Li/sub 0.33/MoO/sub 3/ is a small band gap semiconductor. 14 refs., 2 figs., 1 tab.

Research Organization:
Universite de Paris-Sud, Orsay (France)
DOE Contract Number:
FG05-86ER45259
OSTI ID:
5616269
Journal Information:
Inorg. Chem.; (United States), Journal Name: Inorg. Chem.; (United States) Vol. 27:2; ISSN INOCA
Country of Publication:
United States
Language:
English