Ultrasonic relaxation of interstitial aluminum in irradiated silicon

Journal Article · Mon Apr 15 04:00:00 EDT 1991 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.43.9728· OSTI ID:5615879

Johnson, W L ^[1]; Granato, A V ^[2]

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1. Materials Research Laboratory and Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (USA) Metallurgy Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (USA)
2. Materials Research Laboratory and Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (USA)

An ultrasonic relaxation arising from a nonequilibrium charge state of interstitial aluminum is observed in aluminum-doped silicon irradiated with electrons at 10 K. This relaxation is present in the {ital C}{prime} shear mode while the sample is exposed to white light, electron irradiation, or {gamma} rays. The thermally activated reorientation rate of the defect is 7.7{times}10{sup 10} exp(({minus}5.1 meV)/{ital kT}) sec{sup {minus}1}. Based on the mode dependence of the relaxation, a defect model is suggested which follows naturally from the known structure of lower charge states of interstitial aluminum. This model has the defect electrically neutral, with the aluminum atom on the site which is tetrahedral in the perfect lattice and with the surrounding silicon atoms displaced into a tetragonal configuration.

• DOE Contract Number: AC02-76ER01198
• OSTI ID: 5615879
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:12; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALLOYS
ALUMINIUM ADDITIONS
ALUMINIUM ALLOYS
BEAMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON BEAMS
ELEMENTS
INTERSTITIALS
LEPTON BEAMS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RELAXATION TIME
SEMIMETALS
SILICON
SOUND WAVES
ULTRALOW TEMPERATURE
ULTRASONIC WAVES