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Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings

Journal Article · · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/3.234440· OSTI ID:5614620
; ;  [1]
  1. Univ. of California, Santa Barbara, CA (United States)

The authors have recently demonstrated 57 nm of tuning in a monolithic semiconductor laser using conventional DBR technology with grating elements removed in a periodic fashion. This paper describes the theory and design of these sampled grating tunable lasers. They first calculate sampled grating reflectivity. They then present normalized design curves which quantify tradeoffs involved in a sampled grating DBR laser with two mismatched sampled grating mirrors. These results are applied to design example in the InP-InGaAsP system. The design example provides 70 nm tuning wile maintaining [gt]30 dB MSR, with fractional index change [Delta][mu]/[mu] [lt] 0.2% in the mirrors, and only 1 mm of total sampled grating length. Section 4 summarizes recent experimental results, and compares them to theory. They also analyze other device structures which make use of sampled gratings.

OSTI ID:
5614620
Journal Information:
IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 29:6; ISSN 0018-9197; ISSN IEJQA7
Country of Publication:
United States
Language:
English