Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings
- Univ. of California, Santa Barbara, CA (United States)
The authors have recently demonstrated 57 nm of tuning in a monolithic semiconductor laser using conventional DBR technology with grating elements removed in a periodic fashion. This paper describes the theory and design of these sampled grating tunable lasers. They first calculate sampled grating reflectivity. They then present normalized design curves which quantify tradeoffs involved in a sampled grating DBR laser with two mismatched sampled grating mirrors. These results are applied to design example in the InP-InGaAsP system. The design example provides 70 nm tuning wile maintaining [gt]30 dB MSR, with fractional index change [Delta][mu]/[mu] [lt] 0.2% in the mirrors, and only 1 mm of total sampled grating length. Section 4 summarizes recent experimental results, and compares them to theory. They also analyze other device structures which make use of sampled gratings.
- OSTI ID:
- 5614620
- Journal Information:
- IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 29:6; ISSN 0018-9197; ISSN IEJQA7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
DATA
DESIGN
DIFFRACTION GRATINGS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRATINGS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASER MIRRORS
LASERS
MIRRORS
NUMERICAL DATA
OPTICAL PROPERTIES
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE PROPERTIES
TUNING