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Sputtering of negative hydrogen ions by cesium bombardment

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.337800· OSTI ID:5612039
The production of negative hydrogen ions sputtered from a low work function converter surface has been investigated. Hydrogen and cesium admitted into the vacuum chamber are chemisorbed on a polycrystalline molybdenum target. H/sup -/, Mo/sup -/, and e/sup -/ are sputtered from this cathode by Cs/sup +/ ions in the energy range 150--1000 eV. Angular and parallel energy distributions of H/sup -/, Mo/sup -/, and e/sup -/ are measured as a function of hydrogen gas pressure, cesium coverage, and incident ion energy. For optimum coverage, the H/sup -/ ion temperature varies from 0.65% and 0.35% of the incident Cs/sup +/ bombarding energy for Cs/sup +/ ion energies of 250 and 1000 eV, respectively. The secondary electrons have a temperature of 0.04% of the bombarding energy almost independent of Cs/sup +/ energy. The spreads increase with decreasing target coverage and are independent of surface roughness. The optimum H/sup -/, Mo/sup -/, and e/sup -/ yields are also measured as a function of hydrogen pressure and incident Cs/sup +/ bombarding energy. The optimum H/sup -/ ion yield is 0.41 at a Cs/sup +/ ion energy of 750 eV. By extrapolating the H/sup -/ ion yield at low Cs/sup +/ bombarding energy, a Cs/sup +/ ion threshold energy of 120 eV may be estimated. This indicates a binding energy of hydrogen smaller than 3.6 eV.
Research Organization:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030
DOE Contract Number:
AC02-84ER53167
OSTI ID:
5612039
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:1; ISSN JAPIA
Country of Publication:
United States
Language:
English