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Temperature dependence of CsI(T1) absolute scintillation yield

Journal Article · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5611998
; ;  [1];  [2]
  1. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Nuclear Engineering
  2. Los Alamos National Lab., NM (United States)
A cubic CsI(Tl) crystal of 0.8 cm on a side was mounted on a 1 [times] 1 cm square photodiode to measure the absolute scintillation yield of CsI(Tl) between [minus]100 and +50C. The room temperature yield was measured to be 64,800 [+-] 3,200 photons/MeV. The maximum yield was observed to occur at about [minus]35 C, approximately 6% above the room temperature yield. The yield was observed to decrease monotonically above and below this maximum. At [minus]100 and +50 C the yield was measured to be about 64% and 95% of the room temperature yield, respectively. Over the range of [minus]55 to +50 C the scintillation yield was observed to remain within [+-]6% of the room temperature yield. The temperature dependence of scintillation decay time, scintillation emission spectrum, and wavelength dependent photodiode quantum efficiency were considered.
DOE Contract Number:
FG02-86NE37969
OSTI ID:
5611998
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:4; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English