Real-time measurement of picosecond optical pulses from an InGaAsP diode laser using an ultrafast streak camera with infrared frequency up-conversion

Journal Article · Sat Oct 15 04:00:00 EDT 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94489· OSTI ID:5611953

Onodera, N; Ito, H; Inaba, H

A novel method for real-time measurement of ultrashort optical pulses generated from InGaAsP diode lasers at the wavelength of 1.3 ..mu..m has been realized by means of an ultrafast streak camera incorporating a frequency up-conversion technique with a LiIO/sub 3/ crystal pumped by a Q-switched neodymium: yttrium aluminum garnet (Nd:YAG) laser at 1.064 ..mu..m. The optical pulse from an InGaAsP double-channel planar buried heterostructure (DC-PBH) diode laser operated by a short pulse current of 1-ns duration was measured to have a full width at half-maximum (FWHM) of approximately 28 ps by single shot scanning with the temporal resolution of 8 ps. Using a 15-mm-long LiIO/sub 3/ crystal and 500-W peak power of the pumping laser pulse focused at 400 ..mu..m in diameter, the up-conversion efficiency and minimum detectable peak power of the diode laser pulse at 1.3 ..mu..m were estimated to be approximately 0.65% and 1 mW, respectively. This technique can be widely utilized for real-time detection of ultrashort optical pulses in the wavelength range beyond 1--10 ..mu..m or more.

• Research Organization: Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Sendai 980, Japan
• OSTI ID: 5611953
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
CAMERAS
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
FREQUENCY CONVERTERS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFRARED RADIATION
LASERS
MEASURING METHODS
NEAR INFRARED RADIATION
PHOSPHORUS COMPOUNDS
PULSES
RADIATIONS
RESOLUTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION