Kinetics barriers to structural phase transitions in semiconductor nanocrystals
Conference
·
OSTI ID:560436
- Univ. of California, Berkeley, CA (United States)
Pressure-induced structural phase transitions in semiconductors typically exhibit a large pressure hysteresis, indicating a significant kinetic barrier to transformation. In bulk solids, the kinetics are complex, involving multiple nucleation events at defects and domain fracture. Nanocrystals, however, transform via a single nucleation event per nanocrystal. We have studied the kinetics of pressure-induced phase transitions in CdSe nanocrystals with high pressure, high temperature X-ray diffraction and optical absorption measurements in a diamond anvil cell. Unimolecular kinetics are observed. The variation of the barrier height with nanocrystal size will be discussed.
- OSTI ID:
- 560436
- Report Number(s):
- CONF-970443--
- Country of Publication:
- United States
- Language:
- English
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