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Density variation in the electron-hole liquid in stressed germanium and silicon

Technical Report ·
DOI:https://doi.org/10.2172/5603986· OSTI ID:5603986
A detailed study is presented of the variation in electron-hole pair density in the electron-hole liquid (EHL) in stressed Ge and Si. First, the variation of the density and other properties of the EHL is studied theoretically as a function of uniaxial stress in both Ge and Si. Second, the variation of the density with position is studied both theoretically and experimentally in the strain-confined electron-hole liquid (SCEHL) in Ge.
Research Organization:
California Univ., Berkeley (USA). Lawrence Berkeley Lab.
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
5603986
Report Number(s):
LBL-8786
Country of Publication:
United States
Language:
English