Dynamics of electrons in interfacial quantum wells
- Univ. of California, Berkeley, CA (United States)
Time-resolved two-photon photoemission with sub-100 fs time resolution is used to probe the dynamics of excited electrons in ultrathin layers of Xe on a Ag(111) surface. The Xe layer presents a potential well, bounded on one side by the Ag substrate and on the other side by the vacuum, which supports quantum well states derived from the Xe conduction band. The dynamics of the electrons in excited conduction band-derived quantum well states are found to possess a complex dependence on layer thickness and quantum number. A simple quantum-mechanical model is proposed which accounts for the energies and lifetimes of the lowest members of the quantum well series for 1-6 layers of Xe. These results contribute to a fundamental understanding of carrier dynamics in quantum-confined systems and interfaces and the relationship between quantum well electronic structure and bulk band structure.
- OSTI ID:
- 560372
- Report Number(s):
- CONF-970443--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Interfacial quantum well states of Xe and Kr adsorbed on Ag(111)
Femtosecond studies of electron dynamics at dielectric-metal interfaces