Real-time measurements of thin film growth
Conference
·
OSTI ID:560342
- Sandia National Labs., Albuquerque, NM (United States); and others
Real-time monitoring techniques enable us to measure the evolution of surface morphology during thin film growth. We present results from growth studies using two in situ diagnostics: X-ray reflectivity (XRR) and multi-beam optical stress monitoring. XRR measurements of film thickness and roughness during chemical vapor deposition of Fe on Si(001) provide insight into the kinetics of precursor dissociation and Fe cluster nucleation. Stress measurements during heteroepitaxial growth of SiGe alloys on Si(001) demonstrate how films can relieve misfit strain by changing the surface morphology without introducing dislocations into the film.
- OSTI ID:
- 560342
- Report Number(s):
- CONF-970443--
- Country of Publication:
- United States
- Language:
- English
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